Power semiconductor module

ABSTRACT

This power semiconductor module includes: a bus bar to which each of first main electrodes of semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connected to each of gate pads of the semiconductor switching elements by a bonding wire, wherein at least two of the plurality of semiconductor switching elements are arranged adjacently to each other on the heat-dissipating metal substrate and electrically connected in parallel to form one arm.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present disclosure relates to a power semiconductor module.

2. Description of the Background Art

In an electric vehicle such as an electric car or a plug-in hybrid car, a power conversion device such as an inverter is used for driving a motor by a high-voltage battery, and the power conversion device includes a power semiconductor module for converting power through switching operation. In the power semiconductor module, a semiconductor switching element for performing switching operation is provided on a heat-dissipating metal substrate, and the semiconductor switching element is connected to an external terminal and sealed by a sealing material such as resin or gel.

In the semiconductor switching element, loss according to current and voltage occurs through conduction and switching operation. In order that the increased temperature due to loss does not exceed breakage temperatures of the semiconductor switching element and surrounding members, rated power is set for the semiconductor switching element. In general, in a power semiconductor module for a large-current and high-voltage power conversion device, a large-sized semiconductor switching element is used for ensuring rated power for the power semiconductor module. However, from a viewpoint such as manufacturing technology or yield of the semiconductor switching element, there is a limitation on increasing the size of the semiconductor switching element. Therefore, in a power semiconductor module that requires a large power capacity, a plurality of semiconductor switching elements are connected in parallel so as to suppress heat generation per semiconductor switching element.

If a plurality of semiconductor switching elements are connected in parallel, due to variations in control signals or the like, current imbalance among the semiconductor switching elements occurs at the time of switching. When current imbalance occurs among the semiconductor switching elements, great loss occurs in some of the semiconductor switching elements. Therefore, it becomes necessary to use large semiconductor switching elements or use a large number of semiconductor switching elements, leading to increase in the size and the cost of the power semiconductor module. In this regard, proposed is a technology in which, using the structure of a control signal board in a module, an inductance deviation between control signal wires is reduced and thus variations in the control signals are suppressed (see, for example, Patent Document 1).

Patent Document 1: WO2019/064874

Such a conventional power semiconductor module has a problem that, when there is current imbalance due to variations in ground potentials among the semiconductor switching elements or variations in parasitic inductances among the semiconductor switching elements, the current imbalance cannot be suppressed.

SUMMARY OF THE INVENTION

The present disclosure has been made to solve the above problem, and an object of the present disclosure is to provide a power semiconductor module that reduces variations in control signals, variations in ground potentials, and variations in parasitic inductances among semiconductor switching elements and suppresses current imbalance among the semiconductor switching elements, with use of a simple structure.

A power semiconductor module according to the present disclosure includes: a plurality of semiconductor switching elements each having a first main electrode and a gate pad on a front surface and having a second main electrode on a back surface; a bus bar to which each of the first main electrodes of the semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of the second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connected to each of the gate pads of the semiconductor switching elements by a bonding wire, wherein at least two of the plurality of semiconductor switching elements are arranged adjacently to each other on the heat-dissipating metal substrate and electrically connected in parallel to form one arm.

The power semiconductor module according to the present disclosure includes: the plurality of semiconductor switching elements each having the first main electrode and the gate pad on the front surface and having the second main electrode on the back surface; the bus bar to which each of the first main electrodes of the semiconductor switching elements is joined; the heat-dissipating metal substrate to which each of the second main electrodes of the semiconductor switching elements is joined; and the control gate terminal connected to each of the gate pads of the semiconductor switching elements by the bonding wire, wherein at least two of the plurality of semiconductor switching elements are arranged adjacently to each other on the heat-dissipating metal substrate and electrically connected in parallel to form one arm. Thus, it becomes possible to reduce variations in control signals, variations in ground potentials, and variations in parasitic inductances among semiconductor switching elements and suppress current imbalance among the semiconductor switching elements, with use of a simple structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing the outer appearance of a power semiconductor module according to the first embodiment of the present disclosure;

FIG. 2 is a view showing the internal structure of the power semiconductor module according to the first embodiment, from which a resin mold is removed;

FIG. 3 is an equivalent circuit diagram of the power semiconductor module according to the first embodiment;

FIG. 4 is a view showing the outer appearance of a power semiconductor module according to the second embodiment of the present disclosure;

FIG. 5 is a view showing the internal structure of the power semiconductor module according to the second embodiment, from which a resin mold is removed;

FIG. 6 is an equivalent circuit diagram of the power semiconductor module according to the second embodiment;

FIG. 7 is a view showing the outer appearance of a power semiconductor module according to the third embodiment of the present disclosure;

FIG. 8 is a view showing the internal structure of the power semiconductor module according to the third embodiment, from which a resin mold is removed;

FIG. 9 is a view showing the outer appearance of a power semiconductor module according to the fourth embodiment of the present disclosure;

FIG. 10 is a view showing the internal structure of the power semiconductor module according to the fourth embodiment, from which a resin mold is removed;

FIG. 11 is a view showing the internal structure of the power semiconductor module according to the fourth embodiment, from which the resin mold, a negative arm N bus bar, and a control ground terminal are removed; and

FIG. 12 is a view showing the internal structure of the power semiconductor module according to the fourth embodiment, from which the resin mold, the negative arm N bus bar, the control ground terminal, and an intermediate bus bar are removed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION

Hereinafter, power semiconductor modules according to embodiments for carrying out the present disclosure will be described in detail with reference to the drawings. In the drawings, the same reference characters denote the same or corresponding parts.

First Embodiment

FIG. 1 is a view showing the outer appearance of a power semiconductor module 100 according to the first embodiment of the present disclosure. FIG. 2 is a view showing the internal structure of the power semiconductor module 100 according to the first embodiment, from which a resin mold 1 is removed. The power semiconductor module 100 according to the first embodiment includes the resin mold 1, a P bus bar 2, an N bus bar 3, a control ground terminal 4, a control gate terminal 5, a heat-dissipating metal substrate 6, a semiconductor switching element 7 a, a semiconductor switching element 7 b, and a bonding wire 8. The semiconductor switching element 7 a has a source electrode 9 a and a gate pad 10 a on a front surface, and has a drain electrode (not shown) on a back surface. The semiconductor switching element 7 b has a source electrode 9 b and a gate pad 10 b on a front surface, and has a drain electrode (not shown) on a back surface. The semiconductor switching element 7 a and the semiconductor switching element 7 b are arranged adjacently to each other on the heat-dissipating metal substrate 6, and the drain electrodes of the semiconductor switching element 7 a and the semiconductor switching element 7 b are jointed to the heat-dissipating metal substrate 6 so as to be electrically connected therewith. The N bus bar 3 is provided on the semiconductor switching element 7 a and the semiconductor switching element 7 b, and the source electrode 9 a of the semiconductor switching element 7 a and the source electrode 9 b of the semiconductor switching element 7 b are joined to the N bus bar 3 so as to be electrically connected therewith. Thus, the semiconductor switching element 7 a and the semiconductor switching element 7 b are electrically connected in parallel between their drain electrodes and between their source electrodes, to form a pair of arms. The N bus bar 3 is connected to the control ground terminal 4, and one end of the N bus bar 3 is outputted to the outside of the resin mold 1. The bonding wire 8 is electrically connected to the gate pad 10 a of the semiconductor switching element 7 a and the gate pad 10 b of the semiconductor switching element 7 b, and an end of the bonding wire 8 is electrically connected to the control gate terminal 5. The control gate terminal 5 is outputted to the outside of the resin mold 1. The power semiconductor module 100 is sealed by the resin mold 1.

Solder is used for joining between the heat-dissipating metal substrate 6, and the semiconductor switching element 7 a and the semiconductor switching element 7 b. However, without limitation thereto, another joining method such as Ag sintering may be used. The heat-dissipating metal substrate 6 is a heat spreader made of copper. However, without limitation thereto, the heat-dissipating metal substrate 6 may be made from another substrate material, e.g., a direct bonded copper (DBC) substrate obtained by joining, to a copper base plate, a ceramic insulating substrate which is an insulating material with a metal foil bonded thereon by brazing or the like.

The power semiconductor module 100 is sealed by the resin mold 1 formed through transfer molding, for example. However, without limitation thereto, a resin case in which gel is injected, instead of the resin mold 1, may be used.

FIG. 3 is an equivalent circuit diagram of the power semiconductor module 100 according to the first embodiment. In FIG. 3, the semiconductor switching element 7 a and the semiconductor switching element 7 b are shown as metal-oxide-semiconductor field-effect transistors (MOSFET). However, without limitation thereto, insulated gate bipolar transistors (IGBT), bipolar transistors, or the like may be used. In the case of using IGBTs or bipolar transistors, the part described as “drain” is replaced with “collector”, and the part described as “source” is replaced with “emitter”. In FIG. 3, a configuration using a parasitic diode of the MOSFET as a flyback diode is shown. However, in the case of using a semiconductor switching element such as IGBT, which does not have a parasitic diode, a configuration in which a flyback diode is connected in antiparallel to the semiconductor switching element may be used.

In FIG. 3, a P-side parasitic inductance 21 a, an N-side parasitic inductance 23 a, and a gate control signal parasitic inductance 25 a are parasitic inductances present on wires connected to the semiconductor switching element 7 a, and a P-side parasitic inductance 21 b, an N-side parasitic inductance 23 b, and a gate control signal parasitic inductance 25 b are parasitic inductances present on wires connected to the semiconductor switching element 7 b. As other inductance components, a P-side common inductance 22, an N-side common inductance 24, a gate control signal common inductance 26, and a ground control signal common inductance 27 included in the power semiconductor module 100 commonly between the semiconductor switching element 7 a and the semiconductor switching element 7 b, are shown.

Next, the structure and the effects of the power semiconductor module 100 according to the first embodiment will be described. Current imbalance occurring between the semiconductor switching element 7 a and the semiconductor switching element 7 b is mainly due to two factors. The first factor is variations in parasitic inductances between P and N electrodes. The sum of inductance components of the P-side parasitic inductance 21 a and the N-side parasitic inductance 23 a of the semiconductor switching element 7 a in FIG. 3 is denoted by La, the sum of inductance components of the P-side parasitic inductance 21 b and the N-side parasitic inductance 23 b of the semiconductor switching element 7 b is denoted by Lb, a temporal current change amount during switching of the semiconductor switching element 7 a is denoted by dIa/dt, and a temporal current change amount during switching of the semiconductor switching element 7 b is denoted by dIb/dt. In this case, between drain-source voltages of the semiconductor switching element 7 a and the semiconductor switching element 7 b, a voltage difference represented by ΔVds in Expression (1) occurs.

ΔVds=La(dIa/dt)−Lb(dIb/dt)  (1)

In the semiconductor switching element, when drain-source voltage changes, conducting current changes. Therefore, due to occurrence of the drain-source voltage difference ΔVds, current imbalance occurs. If an inductance for suppressing variations in parasitic inductances between the P and N electrodes of the semiconductor switching element 7 a and the semiconductor switching element 7 b is intentionally added, the current imbalance can be suppressed, but adding the inductance causes a problem of increasing surge voltage and complicating the structure.

In the power semiconductor module 100 according to the first embodiment, as shown in FIG. 2, the semiconductor switching element 7 a and the semiconductor switching element 7 b are arranged adjacently to each other on the heat-dissipating metal substrate 6 and joined thereto, and the N bus bar 3 is provided on the semiconductor switching element 7 a and the semiconductor switching element 7 b and joined thereto, whereby the semiconductor switching element 7 a and the semiconductor switching element 7 b are electrically connected in parallel between their drain electrodes and between their source electrodes. The parasitic inductance of the semiconductor switching element increases in proportion to the length of the current path, and decreases in inverse proportion to the area of the current path. In the power semiconductor module 100, the distance between the semiconductor switching element 7 a and the semiconductor switching element 7 b serving as the current path is made short, and connection is made by a bus bar in which the area of the current path is large, instead of general connection by a bonding wire, whereby the P-side parasitic inductances 21 a, 21 b and the N-side parasitic inductances 23 a, 23 b are reduced. Thus, the sum La of the inductance components of the P-side parasitic inductance 21 a and the N-side parasitic inductance 23 a, and the sum Lb of the inductance components of the P-side parasitic inductance 21 b and the N-side parasitic inductance 23 b, are reduced, so that the drain-source voltage difference ΔVds is reduced, whereby current imbalance can be suppressed. The shorter the distance between the semiconductor switching element 7 a and the semiconductor switching element 7 b is, the more the current imbalance is suppressed. Therefore, the distance between the nearest points of the semiconductor switching element 7 a and the semiconductor switching element 7 b is set to, for example, 5 mm or less.

The second factor for current imbalance occurring between the semiconductor switching element 7 a and the semiconductor switching element 7 b is variations in gate voltages caused by variations in ground potentials and variations in control signals. Variations in ground potentials between the semiconductor switching elements are caused by variations between a product of the N-side parasitic inductance 23 a and dIa/dt and a product of the N-side parasitic inductance 23 b and dIb/dt. Variations in control signals are caused by magnetic coupling between each parasitic inductance in the circuit, and the gate control signal parasitic inductance 25 a and the gate control signal parasitic inductance 25 b. The magnitude of the influence of the magnetic coupling is proportional to the magnitudes of the inductance values and the magnitude of temporal change in current flowing through each parasitic inductance in the circuit.

In the power semiconductor module 100 according to the first embodiment, as shown in FIG. 2, the semiconductor switching element 7 a and the semiconductor switching element 7 b are arranged adjacently to each other on the heat-dissipating metal substrate 6 and joined thereto, and the N bus bar 3 is provided on the semiconductor switching element 7 a and the semiconductor switching element 7 b and joined thereto, whereby the N-side parasitic inductances 23 a, 23 b are reduced. Thus, variations in the ground potentials are suppressed.

In addition, on the semiconductor switching element 7 a and the semiconductor switching element 7 b arranged adjacently to each other, the bonding wire 8 is connected to the gate pad 10 a and the gate pad 10 b, and an end of the bonding wire 8 is connected to the control gate terminal 5. Here, the gate control signal parasitic inductance 25 a is a parasitic inductance generated in the bonding wire 8 from the gate pad 10 a of the semiconductor switching element 7 a to the gate pad 10 b of the semiconductor switching element 7 b. In the power semiconductor module 100 according to the first embodiment, the semiconductor switching element 7 a and the semiconductor switching element 7 b are arranged adjacently to each other, and the distance between the gate pad 10 a of the semiconductor switching element 7 a and the gate pad 10 b of the semiconductor switching element 7 b is short. Therefore, the gate control signal parasitic inductance 25 a can be reduced. Further, the gate control signal parasitic inductance 25 b is a parasitic inductance generated in a part from the bonding wire 8 to the gate pad 10 b of the semiconductor switching element 7 b, and thus can be almost neglected. Since the magnitude of the influence of the magnetic coupling is proportional to the values of the inductances, variations in control signals can be suppressed. In the power semiconductor module 100 according to the first embodiment, variations in ground potentials are suppressed and variations in control signals are suppressed, whereby variations in the gate voltages are suppressed and thus current imbalance is suppressed.

Among magnetic fluxes generated in the power semiconductor module 100, a magnetic flux generated by P-N current is greatest, and the P-N current is a dominant factor in magnetic coupling between each parasitic inductance in the circuit, and the gate control signal parasitic inductance 25 a and the gate control signal parasitic inductance 25 b.

Therefore, if the N bus bar 3, the heat-dissipating metal substrate 6, and the bonding wire 8 are arranged such that the conduction direction of the P-N current flowing through the N bus bar 3 and the heat-dissipating metal substrate 6 and the direction of current flowing through the bonding wire 8 are perpendicular to each other, variations in control signals are further suppressed, whereby current imbalance can be further suppressed. In the case where, due to layout constraint, it is difficult to arrange the N bus bar 3, the heat-dissipating metal substrate 6, and the bonding wire 8 such that the conduction direction of the P-N current and the direction of current flowing through the bonding wire 8 are perpendicular to each other, current imbalance can be suppressed if the conduction direction of the P-N current and the direction of current flowing through the bonding wire 8 are at least different directions not parallel to each other. That is, it suffices that the N bus bar 3 and the bonding wire 8 are arranged such that the direction of current flowing through the N bus bar 3 and the direction of current flowing through the bonding wire 8 are different from each other, and the heat-dissipating metal substrate 6 and the bonding wire 8 are arranged such that the direction of current flowing through the heat-dissipating metal substrate 6 and the direction of current flowing through the bonding wire 8 are different from each other.

It has been described that the semiconductor switching element 7 a and the semiconductor switching element 7 b have the source electrodes 9 a, 9 b and the gate pads 10 a, 10 b on the front surfaces and have the drain electrodes on the back surfaces, but it suffices that either of the source electrodes 9 a, 9 b and the drain electrodes which are main electrodes are provided as first main electrodes on the front surfaces, and the other ones are provided as second main electrodes on the back surfaces. In the case where the drain electrodes and the gate pads 10 a, 10 b are provided on the front surfaces and the source electrodes 9 a, 9 b are provided on the back surfaces, the positive and negative sides of the bus bar are reversed and the control ground terminal 4 is connected to the heat-dissipating metal substrate 6.

In the power semiconductor module 100 according to the first embodiment, the number of the semiconductor switching elements is two, but the same effects are obtained if two or more semiconductor switching elements are provided. Current imbalance is influenced by the temporal change amount of current, and therefore, if the switching speed is fast, the influence on current imbalance increases. Therefore, in the case of using flyback diodes and semiconductor switching elements formed from, besides silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or diamond which is a wide bandgap semiconductor having a wider bandgap than silicon so as to be capable of high-speed operation, the power semiconductor module 100 according to the first embodiment can obtain more significant effects.

As described above, the power semiconductor module 100 according to the first embodiment includes the plurality of semiconductor switching elements 7 a, 7 b having the first main electrodes 9 a, 9 b and the gate pads 10 a, 10 b on the front surfaces and having the second main electrodes on the back surfaces, the bus bar 3 to which each of the first main electrodes 9 a, 9 b of the semiconductor switching elements 7 a, 7 b is joined, the heat-dissipating metal substrate 6 to which each of the second main electrodes of the semiconductor switching elements 7 a, 7 b is joined, and the control gate terminal 5 connected to each of the gate pads 10 a, 10 b of the semiconductor switching elements 7 a, 7 b by the bonding wire 8, wherein at least two of the plurality of semiconductor switching elements 7 a, 7 b are arranged adjacently to each other on the heat-dissipating metal substrate 6 and electrically connected in parallel to form one arm. Thus, without adding unnecessary members, variations in control signals, variations in ground potentials, and variations in parasitic inductances between the semiconductor switching elements 7 a, 7 b are reduced, whereby current imbalance between the semiconductor switching elements 7 a, 7 b can be suppressed.

Second Embodiment

FIG. 4 is a view showing the outer appearance of a power semiconductor module 200 according to the second embodiment of the present disclosure, and FIG. 5 is a view showing the internal structure of the power semiconductor module 200 according to the second embodiment, from which a resin mold la is removed. The power semiconductor module 200 according to the second embodiment is configured such that the power semiconductor modules 100 according to the first embodiment are arranged mirror-symmetrically with respect to a reference line 1000 as a symmetry axis.

The power semiconductor module 200 according to the second embodiment includes the resin mold 1 a, P bus bars 2 a, 2 b, an N bus bar 3 a, a control ground terminal 4 a, a control gate terminal 5 a, a heat-dissipating metal substrate 6 a, semiconductor switching elements 7 c, 7 d, 7 e, 7 f, and bonding wires 8 a, 8 b. The semiconductor switching elements 7 c, 7 d, 7 e, 7 f are connected to one heat-dissipating metal substrate 6 a, and connected to one N bus bar 3 a. The semiconductor switching element 7 c and the semiconductor switching element 7 d are arranged adjacently to each other on the heat-dissipating metal substrate 6 a, and the drain electrodes of the semiconductor switching element 7 c and the semiconductor switching element 7 d are joined to the heat-dissipating metal substrate 6 a so as to be electrically connected therewith.

The N bus bar 3 a is provided on the semiconductor switching element 7 c and the semiconductor switching element 7 d, and a source electrode 9 c of the semiconductor switching element 7 c and a source electrode 9 d of the semiconductor switching element 7 d are joined to the N bus bar 3 a so as to be electrically connected therewith. Further, the semiconductor switching element 7 e and the semiconductor switching element 7 f are arranged adjacently to each other on the heat-dissipating metal substrate 6 a, and the drain electrodes of the semiconductor switching element 7 e and the semiconductor switching element 7 f are joined to the heat-dissipating metal substrate 6 a so as to be electrically connected therewith. The N bus bar 3 a is provided on the semiconductor switching element 7 e and the semiconductor switching element 7 f, and a source electrode 9 e of the semiconductor switching element 7 e and a source electrode 9 f of the semiconductor switching element 7 f are joined to the N bus bar 3 a so as to be electrically connected therewith. The bonding wire 8 a is connected to a gate pad 10 c of the semiconductor switching element 7 c and a gate pad 10 d of the semiconductor switching element 7 d, and an end of the bonding wire 8 a is connected to the control gate terminal 5 a. In addition, the bonding wire 8 b is connected to a gate pad 10 e of the semiconductor switching element 7 e and a gate pad 10 f of the semiconductor switching element 7 f, and an end of the bonding wire 8 b is also connected to the same control gate terminal 5 a.

In the power semiconductor module 200 according to the second embodiment, the structures of the semiconductor switching elements 7 c, 7 d, the N bus bar 3 a, and the heat-dissipating metal substrate 6 a are the same as the structures of the semiconductor switching elements 7 a, 7 b, the N bus bar 3, and the heat-dissipating metal substrate 6 in the power semiconductor module 100 of the first embodiment. Therefore, current imbalance between the semiconductor switching element 7 c and the semiconductor switching element 7 d is suppressed in the same manner as with current imbalance between the semiconductor switching element 7 a and the semiconductor switching element 7 b in the power semiconductor module 100 of the first embodiment. The structures of the semiconductor switching elements 7 e, 7 f and the heat-dissipating metal substrate 6 a are mirror-symmetric with the structures of the semiconductor switching elements 7 c, 7 d and the heat-dissipating metal substrate 6 a, and thus are the same as the structures of the semiconductor switching elements 7 a, 7 b, the N bus bar 3, and the heat-dissipating metal substrate 6 in the power semiconductor module 100 of the first embodiment. Therefore, current imbalance between the semiconductor switching element 7 e and the semiconductor switching element 7 f is suppressed in the same manner as with current imbalance between the semiconductor switching element 7 a and the semiconductor switching element 7 b in the power semiconductor module 100 of the first embodiment.

Next, an effect of suppressing current imbalance between the semiconductor switching elements 7 c, 7 d and the semiconductor switching elements 7 e, 7 f, which is a unique effect of the power semiconductor module 200 of the second embodiment, will be described. FIG. 6 is an equivalent circuit diagram of the power semiconductor module 200 according to the second embodiment. In FIG. 6, a P-side parasitic inductance 21 c, an N-side parasitic inductance 23 c, and a gate control signal parasitic inductance 25 c are parasitic inductances present on wires connected to the semiconductor switching element 7 c; a P-side parasitic inductance 21 d, an N-side parasitic inductance 23 d, and a gate control signal parasitic inductance 25 d are parasitic inductances present on wires connected to the semiconductor switching element 7 d; a P-side parasitic inductance 21 e, an N-side parasitic inductance 23 e, and a gate control signal parasitic inductance 25 e are parasitic inductances present on wires connected to the semiconductor switching element 7 e; and a P-side parasitic inductance 21 f, an N-side parasitic inductance 23 f, and a gate control signal parasitic inductance 25 f are parasitic inductances present on wires connected to the semiconductor switching element 7 f. As other inductance components, a P-side primary common inductance 28 a, an N-side primary common inductance 29 a, and a gate control signal primary common inductance 30 a included in the power semiconductor module 200 commonly between the semiconductor switching element 7 c and the semiconductor switching element 7 d, are shown, and a P-side primary common inductance 28 b, an N-side primary common inductance 29 b, and a gate control signal primary common inductance 30 b included in the power semiconductor module 200 commonly between the semiconductor switching element 7 e and the semiconductor switching element 7 f, are shown. Further, a P-side common inductance 22 a, an N-side common inductance 24 a, a gate control signal common inductance 26 a, and a ground control signal common inductance 27 a included in the power semiconductor module 200 commonly among the semiconductor switching elements 7 c, 7 d, 7 e, 7 f, are shown.

Regarding variations in parasitic inductances between P and N sides, the P-side parasitic inductances 21 c, 21 d, 21 e, 21 f and the N-side parasitic inductances 23 c, 23 d, 23 e, 23 f are reduced to be extremely small, and thus current imbalance due to these parasitic inductances is suppressed. In the power semiconductor module 200 of the second embodiment, the electrodes of the semiconductor switching elements 7 c, 7 d and the semiconductor switching elements 7 e, 7 f are joined to one heat-dissipating metal substrate 6 a and one N bus bar 3 a and connected in parallel, whereby the P-side primary common inductances 28 a, 28 b and the N-side primary common inductances 29 a, 29 b become small and thus current imbalance is suppressed.

In the power semiconductor module 200, arrangement of a first semiconductor switching element unit composed of the semiconductor switching elements 7 c, 7 d and a second semiconductor switching element unit composed of the semiconductor switching elements 7 e, 7 f, arrangement of the P bus bar 2 a and the P bus bar 2 b, the structure of the N bus bar 3 a, and the structure of the heat-dissipating metal substrate 6 a, are mirror-symmetric with respect to the reference line 1000 as the symmetry axis, so that the current conduction paths are mirror-symmetric between the semiconductor switching elements 7 c, 7 d and the semiconductor switching elements 7 e, 7 f. Thus, variations between the P-side primary common inductance 28 a and the P-side primary common inductance 28 b and variations between the N-side primary common inductance 29 a and the N-side primary common inductance 29 b are suppressed, so that current imbalance between the semiconductor switching elements 7 c, 7 d and the semiconductor switching elements 7 e, 7 f is further suppressed.

Here, it is described that the structure of the heat-dissipating metal substrate 6 a is mirror-symmetric with respect to the reference line 1000 as the symmetry axis, but it suffices that a part corresponding to paths through which switching currents flow is mirror-symmetric. In addition, the control gate terminal 5 a and the control ground terminal 4 a not serving as paths through which switching currents flow need not be mirror-symmetric. In addition, in the case where a fixation point or the like is needed for manufacturing, the fixation point or the like need not be made mirror-symmetric, unless the fixation point or the like is at a position that influences the paths through which switching currents flow.

In addition, since arrangement of the semiconductor switching elements 7 c, 7 d and the semiconductor switching elements 7 e, 7 f, arrangement of the P bus bar 2 a and the P bus bar 2 b, the structure of the N bus bar 3 a, and the structure of the heat-dissipating metal substrate 6 a, are mirror-symmetric with respect to the reference line 1000 as the symmetry axis, variations in the N-side primary common inductance 29 a and the N-side primary common inductance 29 b are suppressed, so that variations in ground potentials among the semiconductor switching elements 7 c, 7 d, 7 e, 7 f are suppressed.

Further, of the bonding wire 8 a which is a first bonding wire, a part connecting the gate pad 10 c of the semiconductor switching element 7 c and the gate pad 10 d of the semiconductor switching element 7 d, and of the bonding wire 8 b which is a second bonding wire, a part connecting the gate pad 10 e of the semiconductor switching element 7 e and the gate pad 10 f of the semiconductor switching element 7 f, are arranged at positions mirror-symmetric with respect to the reference line 1000 as the symmetry axis. Thus, variations between the gate control signal primary common inductance 30 a which is a parasitic inductance of the bonding wire 8 a and the gate control signal primary common inductance 30 b which is a parasitic inductance of the bonding wire 8 b, can be suppressed, and variations in the influence of magnetic coupling caused between the bonding wire 8 a and each parasitic inductance and in the influence of magnetic coupling caused between the bonding wire 8 b and each parasitic inductance, can be equalized, whereby variations in control signals are suppressed. As a result, variations in gate voltages between the semiconductor switching elements 7 c, 7 d and the semiconductor switching elements 7 e, 7 f are suppressed, whereby current imbalance is suppressed.

Third Embodiment

FIG. 7 is a view showing the outer appearance of a power semiconductor module 300 according to the third embodiment of the present disclosure, and FIG. 8 is a view showing the internal structure of the power semiconductor module 300 according to the third embodiment, from which a resin mold 1 b is removed. As compared to the power semiconductor module 200 according to the second embodiment, the power semiconductor module 300 according to the third embodiment is different in that a bonding wire 8 c connected to the gate pad 10 c of the semiconductor switching element 7 c and the gate pad 10 d of the semiconductor switching element 7 d is connected to a control gate terminal 5 b, a bonding wire 8 d connected to the gate pad 10 e of the semiconductor switching element 7 e and the gate pad 10 f of the semiconductor switching element 7 f is connected to a control gate terminal 5 c, the control gate terminal 5 b which is a first control gate terminal and the control gate terminal 5 c which is a second control gate terminal are mirror-symmetric with respect to the reference line 1000 as the symmetry axis, and the bonding wire 8 c which is a first bonding wire and the bonding wire 8 d which is a second bonding wire are mirror-symmetric with respect to the reference line 1000 as the symmetry axis. In addition, the shapes of an N bus bar 3 b, a control ground terminal 4 b, and a heat-dissipating metal substrate 6 b are different from those in the power semiconductor module 200 according to the second embodiment, but the shapes of the N bus bar 3 b and the heat-dissipating metal substrate 6 b are mirror-symmetric with respect to the reference line 1000 as the symmetry axis, and this is the same as in the power semiconductor module 200 according to the second embodiment.

In the power semiconductor module 200 according to the second embodiment, currents flowing through the bonding wire 8 a and the bonding wire 8 b flow through one control gate terminal 5 a, so that large current flows through the gate control signal common inductance 26 a shown in FIG. 6. At this time, a voltage difference occurs in the gate control signal common inductance 26 a of the control gate terminal 5 a, and this causes erroneous ON operation due to increase in the gate voltages of the semiconductor switching elements 7 c, 7 d, 7 e, 7 f, for example, whereby the switching speed is restricted. In the power semiconductor module 300 according to the third embodiment, the bonding wire 8 c which is a first bonding wire and the bonding wire 8 d which is a second bonding wire are respectively connected to different control gate terminals, so that current flowing through one control gate terminal becomes small, whereby a voltage difference occurring in the control gate terminal can be suppressed. Thus, further high-speed switching can be performed.

Fourth Embodiment

FIG. 9 is a view showing the outer appearance of a power semiconductor module 400 according to the fourth embodiment of the present disclosure, and FIG. 10 is a view showing the internal structure of the power semiconductor module 400 according to the fourth embodiment, from which a resin mold 1 c is removed. FIG. 11 is a view showing the internal structure of the power semiconductor module 400 according to the fourth embodiment, from which the resin mold 1 c, a negative arm N bus bar 12, and a control ground terminal 4 c are removed. FIG. 12 is a view showing the internal structure of the power semiconductor module 400 according to the fourth embodiment, from which the resin mold 1 c, the negative arm N bus bar 12, the control ground terminal 4 c, and an intermediate bus bar 14 are removed.

The power semiconductor module 400 according to the fourth embodiment has two arms, i.e., a positive arm and a negative arm, formed by semiconductor switching elements, and thus has a configuration called “2-in-1 module” in which the positive arm and the negative arm are connected in series. The power semiconductor module 400 according to the fourth embodiment is configured such that the power semiconductor module 200 according to the second embodiment and a power semiconductor module obtained by reversing the power semiconductor module 200 according to the second embodiment in the up-down direction are arranged side by side.

In the upper half of the power semiconductor module 400 according to the fourth embodiment, as compared to the power semiconductor module 200 according to the second embodiment, the P bus bars 2 a, 2 b are replaced with AC bus bars 13 a, 13 b, and the N bus bar 3 a is replaced with the negative arm N bus bar 12, but the resin mold 1 c, the AC bus bars 13 a, 13 b, the negative arm N bus bar 12, the control ground terminal 4 c, a control gate terminal 5 d, a heat-dissipating metal substrate 6 c, semiconductor switching elements 7 g, 7 h, 7 i, 7 j, and bonding wires 8 e, 8 f are provided and arrangement of these is the same as in the power semiconductor module 200 according to the second embodiment. Drain electrodes of the semiconductor switching elements 7 g, 7 h, 7 i, 7 j are connected to one heat-dissipating metal substrate 6 c, and the heat-dissipating metal substrate 6 c is connected to the AC bus bars 13 a, 13 b. Source electrodes 9 g, 9 h, 9 i, 9 j of the semiconductor switching elements 7 g, 7 h, 7 i, 7 j are connected to one negative arm N bus bar 12, and the negative arm N bus bar 12 is connected to the control ground terminal 4 c. The bonding wire 8 e is connected to a gate pad 10 g of the semiconductor switching element 7 g and a gate pad 10 h of the semiconductor switching element 7 h, and an end of the bonding wire 8 e is connected to the control gate terminal 5 d. The bonding wire 8 f is connected to a gate pad 10 i of the semiconductor switching element 7 i and a gate pad 10 j of the semiconductor switching element 7 j, and an end of the bonding wire 8 f is also connected to the control gate terminal 5 d.

In the lower half of the power semiconductor module 400 according to the fourth embodiment, as compared to the power semiconductor module 200 according to the second embodiment, the P bus bars 2 a, 2 b are replaced with positive arm P bus bars 11 a, 11 b, and the N bus bar 3 a is replaced with the intermediate bus bar 14, but the resin mold 1 c, the positive arm P bus bars 11 a, 11 b, the intermediate bus bar 14, a control ground terminal 4 d, a control gate terminal 5 e, a heat-dissipating metal substrate 6 d, semiconductor switching elements 7 k, 71, 7 m, 7 n, and bonding wires 8 g, 8 h are provided and arrangement of these is the same as in the power semiconductor module 200 according to the second embodiment. Drain electrodes of the semiconductor switching elements 7 k, 71, 7 m, 7 n are connected to one heat-dissipating metal substrate 6 d, and the heat-dissipating metal substrate 6 d is connected to the positive arm P bus bars 11 a, 11 b.

Source electrodes 9 k, 91, 9 m, 9 n of the semiconductor switching elements 7 k, 71, 7 m, 7 n are connected to one intermediate bus bar 14, and the intermediate bus bar 14 is connected to the control ground terminal 4 d and the heat-dissipating metal substrate 6 c. The bonding wire 8 g is connected to a gate pad 10 k of the semiconductor switching element 7 k and a gate pad 101 of the semiconductor switching element 71, and an end of the bonding wire 8 g is connected to the control gate terminal 5 e. The bonding wire 8 h is connected to a gate pad 10 m of the semiconductor switching element 7 m and a gate pad 10 n of the semiconductor switching element 7 n, and an end of the bonding wire 8 h is also connected to the control gate terminal 5 e.

The semiconductor switching elements 7 k, 71, 7 m, 7 n are connected in parallel by the heat-dissipating metal substrate 6 d and the intermediate bus bar 14, to form a positive arm, and the semiconductor switching elements 7 g, 7 h, 7 i, 7 j are connected in parallel by the heat-dissipating metal substrate 6 c and the negative arm N bus bar 12, to form a negative arm. The heat-dissipating metal substrate 6 c being at a drain potential of the negative arm is connected to the intermediate bus bar 14 being at a source potential of the positive arm, whereby the positive arm and the negative arm are connected to each other using the heat-dissipating metal substrate 6 c as a connection point. The AC bus bars 13 a, 13 b which are AC electrodes are connected to the heat-dissipating metal substrate 6 c which is the connection point between the positive arm and the negative arm. The intermediate bus bar 14 is provided so as to overlap the negative arm N bus bar 12, and thus the intermediate bus bar 14 and the negative arm N bus bar 12 form a two-layer structure.

Next, the structure and the effects of the power semiconductor module 400 according to the fourth embodiment will be described. The directions of currents flowing through the intermediate bus bar 14 and the negative arm N bus bar 12 are opposite to each other, and the intermediate bus bar 14 is provided so as to overlap the negative arm N bus bar 12. Therefore, currents flowing through the intermediate bus bar 14 and the negative arm N bus bar 12 act so as to cancel the parasitic inductances. Here, the intermediate bus bar 14 is at the source potential of the semiconductor switching elements 7 k, 71, 7 m, 7 n, i.e., the ground potential, and thus, when the parasitic inductance of the intermediate bus bar 14 is reduced, current imbalance among the semiconductor switching elements 7 k, 71, 7 m, 7 n is suppressed. Similarly, the negative arm N bus bar 12 is at the source potential of the semiconductor switching elements 7 g, 7 h, 7 i, 7 j, i.e., the ground potential, and thus, when the parasitic inductance of the negative arm N bus bar 12 is reduced, current imbalance among the semiconductor switching elements 7 g, 7 h, 7 i, 7 j is suppressed. In addition, when the sum of the parasitic inductances on the P and N sides is reduced, surge voltage due to switching is reduced, whereby further high-speed switching can be performed.

Although the disclosure is described above in terms of various exemplary embodiments, it should be understood that the various features, aspects, and functionality described in one or more of the individual embodiments are not limited in their applicability to the particular embodiment with which they are described, but instead can be applied, alone or in various combinations to one or more of the embodiments of the disclosure.

It is therefore understood that numerous modifications which have not been exemplified can be devised without departing from the scope of the present disclosure. For example, at least one of the constituent components may be modified, added, or eliminated. At least one of the constituent components mentioned in at least one of the preferred embodiments may be selected and combined with the constituent components mentioned in another preferred embodiment.

DESCRIPTION OF THE REFERENCE CHARACTERS

-   1, 1 a, 1 b, 1 c resin mold -   2, 2 a, 2 b P bus bar -   3, 3 a, 3 b N bus bar -   4, 4 a, 4 b, 4 c, 4 d control ground terminal -   5, 5 a, 5 b, 5 c, 5 d, 5 e control gate terminal -   6, 6 a, 6 b, 6 c, 6 d heat-dissipating metal substrate -   7 a, 7 b, 7 c, 7 d, 7 e, 7 f, 7 g, 7 h, 7 i, 7 j, 7 k, 71, 7 m, 7 n     semiconductor switching element -   8, 8 a, 8 b, 8 c, 8 d, 8 e, 8 f, 8 g, 8 h bonding wire -   9 a, 9 b, 9 c, 9 d, 9 e, 9 f, 9 g, 9 h, 9 i, 9 j, 9 k, 91, 9 m, 9 n     source electrode -   10 a, 10 b, 10 c, 10 d, 10 e, 10 f, 10 g, 10 h, 10 i, 10 j, 10 k,     101, 10 m, 10 n gate pad -   11 a, 11 b positive arm P bus bar -   12 negative arm N bus bar -   13 a, 13 b AC bus bar -   14 intermediate bus bar -   21 a, 21 b, 21 c, 21 d, 21 e, 21 f P-side parasitic inductance -   22, 22 a P-side common inductance -   23 a, 23 b, 23 c, 23 d, 23 e, 23 f N-side parasitic inductance -   24, 24 a N-side common inductance -   25 a, 25 b, 25 c, 25 d, 25 e, 25 f gate control signal parasitic     inductance -   26, 26 a gate control signal common inductance -   27, 27 a ground control signal common inductance -   28 a, 28 b P-side primary common inductance -   29 a, 29 b N-side primary common inductance -   30 a, 30 b gate control signal primary common inductance -   100, 200, 300, 400 power semiconductor module -   1000 reference line 

What is claimed is:
 1. A power semiconductor module comprising: a plurality of semiconductor switching elements each having a first main electrode and a gate pad on a front surface and having a second main electrode on a back surface; a bus bar to which each of the first main electrodes of the semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of the second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connected to each of the gate pads of the semiconductor switching elements by a bonding wire, wherein at least two of the plurality of semiconductor switching elements are arranged adjacently to each other on the heat-dissipating metal substrate and electrically connected in parallel to form one arm.
 2. The power semiconductor module according to claim 1, wherein a distance between nearest points of at least two of the semiconductor switching elements arranged adjacently to each other is 5 mm or less.
 3. The power semiconductor module according to claim 1, wherein the bus bar, the heat-dissipating metal substrate, and the bonding wire are arranged such that a direction of current flowing through the bus bar and a direction of current flowing through the bonding wire are different from each other, and a direction of current flowing through the heat-dissipating metal substrate and the direction of the current flowing through the bonding wire are different from each other.
 4. The power semiconductor module according to claim 1, wherein the gate pads of at least two of the semiconductor switching elements arranged adjacently to each other are connected to one of the plurality of bonding wires, and all the bonding wires are connected to the one control gate terminal.
 5. The power semiconductor module according to claim 1, wherein the gate pads of at least two of the semiconductor switching elements arranged adjacently to each other are connected to one of the plurality of bonding wires, and the bonding wires are respectively connected to the different control gate terminals.
 6. The power semiconductor module according to claim 1, wherein a first semiconductor switching element unit composed of at least two of the semiconductor switching elements arranged adjacently to each other, and a second semiconductor switching element unit composed of at least two of the semiconductor switching elements arranged adjacently to each other, are arranged mirror-symmetrically with respect to a reference line as a symmetry axis.
 7. The power semiconductor module according to claim 6, wherein a structure of the bus bar is mirror-symmetric with respect to the reference line as the symmetry axis.
 8. The power semiconductor module according to claim 6, wherein a first bonding wire of the bonding wires and a second bonding wire of the bonding wires are arranged mirror-symmetrically with respect to the symmetry axis.
 9. The power semiconductor module according to claim 1, further comprising flyback diodes connected in antiparallel to the semiconductor switching elements.
 10. The power semiconductor module according to claim 9, wherein the flyback diodes are made of a wide bandgap semiconductor having a wider bandgap than silicon.
 11. The power semiconductor module according to claim 1, wherein the semiconductor switching elements are made of a wide bandgap semiconductor having a wider bandgap than silicon.
 12. The power semiconductor module according to claim 10, wherein the wide bandgap semiconductor is silicon carbide, gallium nitride, or diamond.
 13. The power semiconductor module according to claim 1, comprising two of the arms, wherein one of the arms which serves as a positive arm and the other arm which serves as a negative arm are connected in series to each other, the power semiconductor module further comprising an AC electrode connected to a connection point between the positive arm and the negative arm. 